| Cz法によるバルクSi結晶成長 | ||||
| 番号 | 論文題目 | 著者 | 雑誌名、学会会議録 | 結晶 |
| a-1 | ・NUMERICAL MODELING OF CZOCHRALSKI SILICON CRYSTAL GROWTH | V.V. Kalaev, et al |
European Congress on Computational Methods in Applied Sciences and Engineering ECCOMAS 2000 Barcelona, 11-14 September 2000 |
Si |
| a-2 | ・Gas flow effect on global heat transport andmelt convection in Czochralski silicon growth | V.V. Kalaev, et al |
Journal of Crystal Growth 249 (2003) 87-99 | Si |
| a-3 | ・Modeling analysis of unsteady three-dimensional turbulent melt flow during Czochralski growth of Si crystals | I.Yu. Evstratov, et al |
Journal of Crystal Growth 230 (2001) 22-29 | Si |
| a-4 | ・Numerical study of 3D unsteady melt convection during industrial-scale CZ Si-crystal growth | I.Yu. Evstratov, et al |
Journal of Crystal Growth 237-239 (2002) 1757-1761 | Si |
| a-5 | ・Analysis of magnetic fieldeffect on 3D melt flow in CZ Si growth | N.G. Ivanov, et al |
Journal of Crystal Growth 250 (2003) 183-188 | Si |
| a-6 | ・MODELING OF TURBULENT MELT CONVECTION DURING CZOCHRALSKI BULK CRYSTAL GROWTH | V.V. Kalaev, et al |
Second International Symposium on Turbulence and Shear Flow Phenomena TSFP-2, Vol. 3, Stockholm, June 27-29, 2001 |
Si |
| a-7 | ・Modelling of turbulent melt convection during Czochralski bulk crystal growth | V.V. Kalaev, et al |
Journal of Turbulence 3 (2002) 001 | Si |
| a-8 | ・Large Eddy Simulation of Melt Convection during Czochralski Crystal Growth | V.V. Kalaev, et al |
Advances Turbulence IX Proceedings of the Nith European Turbulunce Confrence 2002 |
Si |
| a-9 | ・Calculation of bulk defects in CZ Si growth: impact of melt turbulent fluctuations | V.V. Kalaev, et al |
Journal of Crystal Growth 250 (2003) 203-208 | Si |
| a-10 | ・HYBRID LES/RANS SIMULATION OF MELT CONVECTION DURING CRYSTAL GROWTH | V.V. Kalaev, et al |
Engineering Turbulunce Modeling and Expriments-5 2002 Elsevier Science |
Si |
| a-11 | ・Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection | V.V. Kalaev, et al |
Materials Science in Semiconductor Processing | Si |
| a-12 | ・Modeling of Czochralski growth of Si crystals in industrial systems with and without magnetic fields | V.V. Kalaev, et al |
The 4th International Symposium on Advanced Science and Technology of Silicon
Materials (JSPS Si Symposium), Nov. 22-26, 2004,Kona, Hawaii, USA |
Si |
| a-13 | ・Combined effect of DC magnetic fields and free surface stresses on the melt flow and crystallization front formation during 400mm diameter Si Cz crystal growth | V.V. Kalaev | Journal of Crystal Growth 303 (2007) 203-210 | Si |
| a-14 | ・Advances in the simulation of heat transfer and prediction of the melt-crystal interface shape in silicon CZ growth | D.P. Lukanin, et al |
Journal of Crystal Growth 266 (2004) 20-27 | Si |
| a-15 | ・Optimization of Furnace Design and Growth Parameters for Si Cz Growth, Using Numerical Simulation | O.V. Smirnova, et al |
No journal name | Si |
| a-16 | ・Modeling of Impurity Transport and Point Defect Formation during CZ Si Crystal Growth | V.V. Kalaev, et al |
Solid State Phenomena vol 82-84 (2002) pp. 41-46 | Si |
| a-17 | ・Modeling of point defect formation in silicon monocrystals | V.A. Zabelin, et al |
Microelectronic Engineering 69 (2003) 641-645 | Si |
| a-18 | ・MODELING ANALYSIS OF OXYGEN TRANSPORT DURING CZOCHRALSKI GROWTH OF SILICON CRYSTALS | YU.E..EGOROV, et al |
Mat. Res. Soc. Symp. Proc. v.490, 1998, 181-186 | Si |
| a-19 | ・Global model of Czochralski silicon growth to predict oxygen content and thermal fluctuations at the melt–crystal interface | I.Yu. Evstratov, et al |
Microelectronic Engineering 56 (2001) 139-142 | Si |
| a-20 | ・Development of oxygen transport model in Czochralski growth of silicon crystals | Andrey Smirnov, et al |
Journal of Crystal Growth 310 (2008) 2970-2976 |
Si |
| a-21 | ・Analysis of impurity transport and deposition processes on the furnace elements during Czsilicon growth | Andrey Smirnov, et al |
Journal of Crystal Growth 311 (2009) 829-832 | Si |
| DS法によるバルクSi多結晶成長 | ||||
| 番号 | 論文題目 | 著者 | 雑誌名、学会会議録 | 結晶 |
| b-1 | ・The carbon distribution in multicrystalline silicon ingots grown using the directional solidification process | Ying-Yang Teng, et al |
Journal of Crystal Growth 312 (2010) 1282-1290 | Poly-Si |
| b-2 | ・CRYSTALLINE FRONT CONTROL OF GROWING MULTICRYSTALLINE SI INGOTS DURING THE DIRECTIONAL SOLIDIFICATION PROCESS | Ying-Yang Teng, et al |
Proceedings of PVSEC-18 conference | Poly-Si |
| Cz法によるバルクSiGe結晶成長 | ||||
| 番号 | 論文題目 | 著者 | 雑誌名、学会会議録 | 結晶 |
| c-1 | ・Simulation of heat transfer and melt flow in Czochralski growth of Si1 xGex crystals | O.V. Smirnova, et al |
Journal of Crystal Growth 266 (2004) 74-80 | SiGe |
| c-2 | ・Numerical investigation of crucible rotation effect on crystallization rate behavior during Czochralski growth of Si1 xGex crystals | O.V. Smirnova, et al |
Journal of Crystal Growth 287 (2006) 281-286 | SiGe |
| c-3 | ・Three-dimensional unsteady modeling analysis of silicon transport in melt during Cz growth of Ge1 xSix bulk crystals | O.V. Smirnova, et al |
Journal of Crystal Growth 303 (2007) 141-145 | SiGe |
| III-V族半導体バルク結晶成長 | ||||
| 番号 | 論文題目 | 著者 | 雑誌名、学会会議録 | 結晶 |
| d-1 | ・Modeling analysis of liquid encapsulated Czochralski growth of GaAs and InP crystals | E. V. Yakovlev, et al |
Cryst. Res. Technol. 38, No. 6, 506-514 (2003) | GaAs, InP |
| d-2 | ・2D simulation of carbon transport at the growth of GaAS crystals by liquid encapsulated Czochralski techniques | E.N. Bystrova, et al |
Journal of Crystal Growth 275 (2005) e507-e514 | GaAs |
| d-3 | ・3D unsteady numerical analysis of conjugate heat transport and turbulent/laminar flows in LEC growth of GaAs crystals | O.V. Smirnova, et al |
International Journal of Heat and Mass Transfer 47 (2004) 363-371 | GaAs |
| d-4 | ・3D computations of melt convection andcrystallization front geometry during VCz GaAs growth | O.V. Smirnova, et al |
Journal of Crystal Growth 266 (2004) 67-73 | GaAs |
| d-5 | ・Modeling analysis of VCz growth of GaAs bulk crystals using 3D unsteady melt flow simulations | E.V. Yakovlev, et al |
Journal of Crystal Growth 250 (2003) 195-202 | GaAs |
| d-6 | ・Global heat and mass transfer in vapor pressure controlled Czochralski growth of GaAs crystals | E.V. Yakovlev, et al |
Journal of Crystal Growth 252 (2003) 26-36 | GaAs |
| d-7 | ・Prediction of the melt/crystal interface geometry in liquid encapsulated Czochralski growth of InP bulk crystals | E.N. Bystrova, et al |
Journal of Crystal Growth 250 (2003) 189-194 | InP |
| d-8 | ・3D unsteady analysis of gas turbulent convection during HPLEC InP growth | E.N. Bystrova, et al |
Journal of Crystal Growth 287 (2006) 275-280 | InP |
| Cz法Ky法による半透明結晶成長 | ||||
| 番号 | 論文題目 | 著者 | 雑誌名、学会会議録 | 結晶 |
| e-1 | ・3D numerical simulation of heat transfer during horizontal direct crystallization of corundum single crystals | M.A. Lukanina, et al |
Journal of Crystal Growth 287 (2006) 330-334 | Sapphire |
| e-2 | ・Numerical analysis of sapphire crystal growth by the Kyropoulos technique | S.E. Demina, et al |
Optical Materials 30 (2007) 62–65 | Sapphire |
| e-3 | ・Use of Numerical Simulation for Growing High Quality Sapphire Crystals by the Kyropoulos method | S.E. Demina, et al |
Journal of Crystal Growth 310 (2008) 1443-1447 | Sapphire |
| e-4 | ・Thermal conditions for large alkali-halide crystal growth by the continuous feed method | V.V. Vasilyev, et al |
Optical Materials 30 (2007) 109-112 | CsI |
| e-5 | ・Effect of the shouldering angle on the shape of the solid–liquid interface and temperature fields in sillenite-type crystals growth | V. Bermu´ dez, et al |
Journal of Crystal Growth 279 (2005) 82-87 | BGO |
| e-6 | ・Effect of internal radiation on the crystal–melt interface shape in Czochralski oxide growth | O.N. Budenkova, et al |
Journal of Crystal Growth 266 (2004) 96-102 | BGO |
| e-7 | ・Simulation of global heat transfer in the Czochralski process for BGO sillenite crystals | O.N. Budenkova, et al |
Journal of Crystal Growth 266 (2004) 103-108 | BGO |
| e-8 | ・Peculiarities of the temperature fields in semitransparent oxide crystals being grown by Cz technique | O.N. Budenkova, et al |
Journal of Crystal Growth 275 (2005) e727-e732 | BGO |
| e-9 | ・Global analysis of heat transfer in growing BGO crystals (Bi4Ge3O12) by low-gradient Czochralski method | I.Yu. Evstratov, et al |
Journal of Crystal Growth 235 (2002) 371-376 | BGO |
| e-10 | ・Effect of heat shield on the shape of the solid–liquid interface and temperature field in the BGO-eulithine LTG Cz growth | M.G. Vasiliev, et al |
Journal of Crystal Growth 275 (2005) e745-e750 | BGO |
| e-11 | ・Variations of solid–liquid interface in the BGO low thermal gradients Cz growth for diffuse and specular crystal side surface | V.S. Yuferev, et al |
Journal of Crystal Growth 253 (2003) 383-397 | BGO |
| e-12 | ・Effect of internal radiation on the solid–liquid interface shape in low and high thermal gradient Czochralski oxide growth | O. Budenkova, et al |
Journal of Crystal Growth 303 (2007) 156-160 | BGO |
| e-13 | ・Control of multi-zone resistive heater in low temperature gradient BGO Czochralski growth with a weighing feedback, based on the global dynamic heattransfermodel | V.M. Mamedov, et al |
Journal of Crystal Growth 312 (2010) 2814-2822 | BGO |
| e-14 | ・Heat transfer and convection in Czochralski growth of large BGOC rystals | K. Mazaev, et al |
Journal of Crystal Growth 311 (2009) 3933-3937 | BGO |