| 昇華法によるバルクSiC結晶成長 | ||||
| 番号 | 論文題目 | 著者 | 雑誌名、学会会議録 | 結晶 |
| a-1 | ・Transport phenomena in sublimation growth of SiC bulk crystals | A.S. Segal, et al |
Materials Science and Engineering B61-62 (1999) 40-43 | SiC |
| a-2 | ・Optimization of sublimation growth of SiC bulk crystals using | M.S. Ramm, et al |
Materials Science and Engineering B61-62 (1999) 107-112 | SiC |
| a-3 | ・Analysis of sublimation growth of bulk SiC crystals in tantalum container | S.Yu. Karpov, et al |
Journal of Crystal Growth 211 (2000) 347-351 | SiC |
| a-4 | ・Modeling Analysis of Free-Spreading Sublimation Growth of SiC Crystals | M. V. Bogdanov, et al |
Mat. Res. Soc. Symp. Proc. Vol. 742 (c) 2003 Materials Research Society |
SiC |
| a-5 | ・Growth of Faceted Free-Spreading SiC Bulk Crystals by Sublimation | E.N.Mokhov, et al |
Materials Science Forum | SiC |
| a-6 | ・Modeling of facet formation in SiC bulk crystal growth | I.D. Matukov, et al |
Journal of Crystal Growth 266 (2004) 313-319 | SiC |
| a-7 | ・Faceted Growth of SiC Bulk Crystals | I.D. Matukov, et al |
Materials Science Forum Vols. 457-460 (2004) pp. 63-66 | SiC |
| a-8 | ・In situ visualization of SiC physical vapor transport crystal growth | Peter Wellmann, et al |
Journal of Crystal Growth 275 (2005) e1807-e1812 | SiC |
| a-9 | ・Virtual reactor as a new tool for modeling and optimization of SiC bulk crystal growth | M. V. Bogdanov, et al |
Original paper | SiC |
| a-10 | ・Virtual reactor: a new tool for SiC bulk crystal growth study and optimization | M.V. Bogdanov, et al |
Original paper | SiC |
| a-11 | ・Modeling of Mass Leakage through Porous Crucible in PVT Growth of Bulk SiC Crystals | M.V. Bogdanov, et al |
Original paper | SiC |
| a-12 | ・Effect of Seed Attachment on Stress Evolution in SiC Bulk Crystal Growth by PVT | M.S.Ramm, et al |
Original paper | SiC |
| a-13 | ・Analysis of threading dislocations in wide-bandgap hexagonal semiconductors by energetic approach | A.K. Semennikov, et al |
ICSCRM2003 | SiC |
| a-14 | ・Theoretical Analysis of the Mass Transport in the Powder Charge in Long-Term Bulk SiC Growth | A.V. Kulik, et al |
ICSCRM2003 | SiC |
| a-15 | ・Advances in Modeling of Wide-Bandgap Bulk Crystal Growth | M.V. Bogdanov, et al |
ICSSC2002 | SiC |
| a-16 | ・Global numerical simulation of heat and mass transfer for SiC bulk crystal growth by PVT | M. Selder, et al |
Journal of Crystal Growth 211 (2000) 333-338 | SiC |
| a-17 | ・Bulk SiC Crystal Growth at Constant Growth Rate Utilizing a New Design of Resistive Furnace | Eugene Tupitsyn, et al |
Materials Science Forum Vols. 600-603 (2009) pp 27-30 | SiC |
| a-18 | ・Dynamics of 4H-SiC Plasticity | S.Yu. Karpov, et al |
Original paper | SiC |
| 昇華法によるバルクAlN結晶成長 | ||||
| 番号 | 論文題目 | 著者 | 雑誌名、学会会議録 | 結晶 |
| b-1 | ・Experimental and Theoretical Analysis of Sublimation Growth of Bulk AlN Crystals | Eugenie Mokhov, et al |
ICSCRM 2003, Lyon, France, Part 2, P. 1545-1548 | AlN |
| b-2 | ・Experimental and Theoretical Analysis of Heat and Mass Transport in the System for AlN Bulk Crystal Growth | M.V. Bogdanov, et al |
Mat. Res. Soc. Symp. Proc. Vol. 743 (c) 2003 Materials Research Society |
AlN |
| b-3 | ・Sublimation Growth of AlN bulk crystals in Ta crucibles | E.N. Mokhov, et al |
Journal of Crystal Growth, V. 281, Issue 1, 2005, P. 93-100 | AlN |
| b-4 | ・Experimental and theoretical analysis of sublimation growth of AlN bulk crystals | Yu.N. Makarov, et al |
Journal of Crystal Growth, V. 310, Issue 5, 2008, P. 881-886 | AlN |
| b-5 | ・Sublimation Growth of AlN in Vacuum and in a Gas Atmosphere | S.Yu. Karpov, et al |
phys. stat. sol. (a) 176, 435 (1999) | AlN |
| b-6 | ・On mechanisms of sublimation growth of AlN bulk crystals | A.S. Segal, et al |
Journal of Crystal Growth 211 (2000) 68-72 | AlN |
| b-7 | ・Growth of AlN bulk crystals by sublimation sandwich method | E.N.Mokhov, et al |
Original paper | AlN |
| b-8 | ・Detailed Modeling Analysis of PVT Growth of AlN Bulk Crystals | M.S. Ramm, et al |
Original paper | AlN |
| b-9 | ・AlN Crystal Growth by Sublimation Technique | S.Yu. Karpov, et al |
Materials Science Forum Vols. 353-356 (2001) pp. 779-782 | AlN |
| b-10 | ・Effect of Reactive Ambient on AlN Sublimation Growth | S.Yu. Karpov, et al |
phys. stat. sol. (a) 188, No. 2, 763-767 (2001) | AlN |
| b-11 | ・Role of oxygen in AlN sublimation growth | S.Yu. Karpov, et al |
phys. stat. sol. (c), 1- 4 (2003) | AlN |
| HVPE法によるGaN, AlN AlGaN結晶成長 | ||||
| 番号 | 論文題目 | 著者 | 雑誌名、学会会議録 | 結晶 |
| c-1 | ・Reactor and growth process optimization for growth of thick GaN layers on sapphire substrates by HVPE | E. Richter, et al |
Journal of Crystal Growth 277 (2005) 6-12 | GaN |
| c-2 | ・Surface chemistry and transport effects in GaN hydride vapor phase epitaxy | A.S. Segal, et al |
Journal of Crystal Growth 270 (2004) 384-395 | GaN |
| c-3 | ・Transport and Chemical Mechanisms in GaN Hydride Vapor Phase Epitaxy | Sergey Yu. Karpov, et al |
Mat. Res. Soc. Symp. Proc. Vol. 743 (c) 2003 Materials Research Society | GaN |
| c-4 | ・Modeling analysis of AlN and AlGaN HVPE | A.S. Segal, et al |
Phys. Status Solidi C 6, No. S2, S329-S332 (2009) | AlN, AlGaN |
| CVD法によるバルクSiC結晶成長 | ||||
| 番号 | 論文題目 | 著者 | 雑誌名、学会会議録 | 結晶 |
| d-1 | ・Computational Analysis of SiC HTCVD from Silicon Tetrachloride and Propane | Yu.N. Makarov, et al |
Materials Science Forum Vols. 600-603 (2009) pp 51-53 | SiC |
| d-2 | ・Modeling of gas phase nucleation during silicon carbide chemical vapor deposition | A. N. Vorob’ev, et al |
Diamond and Related Materials 9 (2000) 472-475 | SiC |
| d-3 | ・Effect of gas-phase nucleation on chemical vapor deposition of silicon carbide | A.N. Vorob’ev, et al |
Journal of Crystal Growth 211 (2000) 343-346 | SiC |
| d-4 | ・COMPUTATIONAL EXPERIMENT ON CVD OF SiC: GROWTH RATE, C/Si RATIO, PARASITIC PHASE FORMATION | ANDREI N. VOROB’EV, et al |
Materials Research Society Symposium Proceedings 616, 165 (2000) | SiC |
| d-5 | ・Modeling of silicon carbide chemical vapor deposition in a vertical reactor | A.N. Vorob’ev, et al |
Materials Science and Engineering B61-62 (1999) 172-175 | SiC |
| d-6 | ・Modeling analysis of gas phase nucleation in silicon carbide chemical vapor deposition | A.N. Vorob’ev, et al |
Materials Science and Engineering B61-62 (1999) 176-178 |
SiC |
| d-7 | ・Numerical study of SiC CVD in a vertical cold-wall reactor | A.N. Vorob’ev, et al |
Computational Materials Science 24 (2002) 520-534 | SiC |
| d-8 | ・Influence of Silicon Gas-to-Particle Conversion on SiC CVD in a Cold-Wall Rotating Disc Reactor | A.N. Vorob’ev, et al |
Materials Science Forum Vols. 353-356 (2001) pp 107-110 | SiC |
| d-9 | ・Modeling Analysis of SiC CVD in Planetary Reactor | A.N. Vorob’ev, et al |
Materials Science Forum Vols. 353-356 (2001) pp 103-106 | SiC |
| d-10 | ・MODELING ANALYSIS OF SIC CVD IN THE HORIZONTAL HOT WALL1 REACTORS | A.K. Semennikov, et al |
Original paper | SiC |
| d-11 | EFFECT OF GAS PHASE NUCLEATION ON SILICON CARBIDE CHEMICAL VAPOR DEPOSITION | A.N.Vorob’ev, et al |
Electrochemical Society Proceedings 2000-13, 216 (2000) | SiC |